? 2007 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c; r gs = 1m 200 v v gsm transient 30 v i d25 t c = 25 c 130 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 320 a i a t c = 25 c4a e as t c = 25 c 1.0 j dv/dt i s i dm , v dd v dss, t j 175 c 10 v/ns p d t c = 25 c 830 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g trenchhv tm power mosfet n-channel enhancement mode avalanche rated IXTH130N20T ds99846(06/07) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 1ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 150 c 500 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1 16 m preliminary technical information v dss = 200v i d25 = 130a r ds(on) 16m features z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z 175 c operating temperature advantages z easy to mount z space savings z high power density applications z dc-dc converters z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor control z high speed power switching applications z dc choppers z battery chargers g = gate d = drain s = source tab = drain to-247 (tab) s d g
ixys reserves the right to change limits, test conditions, and dimensions. IXTH130N20T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v; i d = 60a, note 1 70 120 s c iss 8800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 970 pf c rss 122 pf t d(on) resistive switching, 25 c 25 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 18 ns t d(off) r g = 2.0 (external) 57 ns t f 22 ns q g(on) 150 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 44 nc q gd 42 nc r thjc 0.18 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 130 a i sm pulse width limited by t jm 320 a v sd i f = 50a, v gs = 0v, note 1 1.0 v t rr i f = 65a, -di/dt = 100a/ s 150 ns v r = 100v, v gs = 0v note 1. pulse test, t 300 s, duty cycle, d 2 %; preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2007 ixys corporation, all rights reserved IXTH130N20T fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 65a value vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 130a i d = 65a fig. 5. r ds(on) normalized to i d = 65a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTH130N20T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 15 30 45 60 75 90 105 120 135 150 q g - nanocoulombs v gs - volts v ds = 100v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.00 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2007 ixys corporation, all rights reserved IXTH130N20T ixys ref: t_130n20t(8w) 06-07-07 fig. 14. resistive turn-on rise time vs. drain current 10 11 12 13 14 15 16 17 18 19 20 30 40 50 60 70 80 90 100 110 120 130 i d - amperes t r - nanosecond s r g = 2 v gs = 15v v ds = 100v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 10 15 20 25 30 35 40 45 2345678910 r g - ohms t r - nanosecond s 23 24 25 26 27 28 29 30 t d ( o n ) - nanosecond s t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 130a, 65a fig. 16. resistive turn-off switching times vs. junction temperature 13 14 15 16 17 18 19 20 21 22 23 24 25 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 55 60 65 70 75 80 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 , v gs = 15v v ds = 100v i d = 130a i d = 65a i d = 130a fig. 17. resistive turn-off switching times vs. drain current 12 14 16 18 20 22 24 26 28 30 40 50 60 70 80 90 100 110 120 130 i d - amperes t f - nanosecond s 50 55 60 65 70 75 80 85 90 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 2 , v gs = 15v v ds = 100v t j = 125oc t j = 25oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 10 11 12 13 14 15 16 17 18 19 20 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 2 v gs = 15v v ds = 100v i d = 130a i d = 65a fig. 18. resistive turn-off switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 2345678910 r g - ohms t f - nanoseconds 40 60 80 100 120 140 160 180 200 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 65a, 130a
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